STMicroelectronicsBCP53-16通用双极型晶体管
Trans GP BJT PNP 80V 1A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 80 | |
| 5 | |
| 0.5@50mA@500mA | |
| 1 | |
| 40@5mA@2V|100@150mA@2V|25@500mA@2V | |
| 1600 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1.8(Max) |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Design various electronic circuits with this versatile PNP BCP53-16 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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