NXP SemiconductorsBC869,115通用双极型晶体管
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 32 | |
| 20 | |
| 5 | |
| 150 | |
| 0.4 | |
| 0.5@100mA@1A|0.6@200mA@2A | |
| 2 | |
| 100 | |
| 50@5mA@10V|85@500mA@1V|60@1A@1V|40@2A@1V | |
| 1350 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1.6(Max) |
| Package Width | 2.6(Max) |
| Package Length | 4.6(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BC869,115 GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1350 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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