NXP SemiconductorsBC846W,115通用双极型晶体管
Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| 150 | |
| 0.76(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.2@0.5mA@10mA|0.4@5mA@100mA | |
| 0.1 | |
| 15 | |
| 110@2mA@5V | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.35(Max) |
| Package Length | 2.2(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
NXP Semiconductors brings you the solution to your high-voltage BJT needs with their NPN BC846W,115 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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