onsemiBC817-40LT3G通用双极型晶体管

Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile NPN BC817-40LT3G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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