| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 160 | |
| 140 | |
| 6 | |
| -55 to 150 | |
| 1@1mA@10mA|1.2@5mA@50mA | |
| 0.15@1mA@10mA|0.25@5mA@50mA | |
| 0.6 | |
| 100 | |
| 60@1mA@5V|60@10mA@5V|20@50mA@5V | |
| 625 | |
| 300 | |
| -55 | |
| 150 | |
| Fan-Fold | |
| Mounting | Through Hole |
| Package Height | 5.33(Max) mm |
| Package Width | 4.19(Max) mm |
| Package Length | 5.2(Max) mm |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 | |
| Lead Shape | Through Hole |
The NPN 2N5550RLRPG general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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