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Diodes IncorporatedZXTP2012GTAGP BJT

Trans GP BJT PNP 60V 5.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

Look no further than Diodes Zetex's PNP ZXTP2012GTA general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

총 재고 수량 : 252,000 부품

Regional Inventory: 8,000

    Total$353.30Price for 1000

    8,000 재고 있음: 2 일 이내 배송

    • (1000)

      2 일 이내 배송

      Ships from:
      네덜란드
      Date Code:
      2528+
      Manufacturer Lead Time:
      12 주
      Country Of origin:
      독일
      • In Stock: 8,000 부품
      • Price: $0.3533
    • (1000)

      3 일 이내 배송

      Ships from:
      홍콩
      Date Code:
      2518+
      Manufacturer Lead Time:
      12 주
      Country Of origin:
      중국
      • In Stock: 244,000 부품
      • Price: $0.3453

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