Diodes IncorporatedZXTP19020DGTAGP BJT
Trans GP BJT PNP 20V 8A 5300mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 7 | |
| 1.15@800mA@8A | |
| 0.047@100mA@1A|0.13@10mA@1A|0.145@40mA@2A|0.275@800mA@8A | |
| 8 | |
| 300@100mA@2V|200@2A@2V|45@8A@2V | |
| 5300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
The PNP ZXTP19020DGTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 5300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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