Diodes IncorporatedZXTN2005GTAGP BJT
Trans GP BJT NPN 25V 7A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 60 | |
| 25 | |
| 7 | |
| 1.08@150mA@6.5A | |
| 0.04@10mA@500mA|0.05@100mA@1A|0.075@10mA@1A|0.14@10mA@2A|0.23@150mA@6.5A | |
| 7 | |
| 300@10mA@1V|300@1A@1V|200@7A@1V|40@20A@1V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN ZXTN2005GTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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