| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 15 | |
| 2 | |
| 1.5 | |
| 1.6 | |
| 400@4.5V | |
| 5.45@10V | |
| 5.45 | |
| 1.4 | |
| 0.87 | |
| 791 | |
| 2 | |
| 10 | |
| 13 | |
| 4.5 | |
| -40 | |
| 125 | |
| Tape and Reel | |
| 180@10V|291@4.5V|476@3V|606@2.7V | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 3.9 |
| Package Length | 4.91 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this TPS1100DR power MOSFET from Texas Instruments. Its maximum power dissipation is 791 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.