onsemiTIP116GDarlington BJT

Amplify your current using ON Semiconductor's PNP TIP116G Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.