| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 21.4 | |
| 100 | |
| 1 | |
| 31@10V | |
| 6.5@4.5V|11@10V | |
| 11 | |
| 3 | |
| 3 | |
| 35 | |
| 670@25V | |
| 140 | |
| 5700 | |
| 68 | |
| 250 | |
| 35 | |
| 18 | |
| -55 | |
| 150 | |
| 25@10V|37@4.5V | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
This SUD23N06-31-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 5700 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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