STMicroelectronicsSTL9N60M2MOSFETs
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 4.8 | |
| 10000 | |
| 1 | |
| 860@10V | |
| 10@10V | |
| 10 | |
| 320@100V | |
| 48000 | |
| 13.5 | |
| 7.5 | |
| 22 | |
| 8.8 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95(Max) mm |
| PCB changed | 8 |
| Supplier Package | Power Flat EP |
| 8 | |
| Lead Shape | No Lead |
Create an effective common drain amplifier using this STL9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.