STMicroelectronicsSTGW30NC120HDIGBT Chip
Trans IGBT Chip N-CH 1200V 60A 220W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±25 | |
| 1200 | |
| 2.2 | |
| 60 | |
| 0.1 | |
| 220 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 20.15(Max) |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
The STGW30NC120HD IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 220000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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