STMicroelectronicsSTD15N60M2-EPMOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4.75 | |
| 11 | |
| 10000 | |
| 1 | |
| 378@10V | |
| 17@10V | |
| 17 | |
| 590@100V | |
| 110000 | |
| 15 | |
| 10 | |
| 40 | |
| 11 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) |
| Package Width | 6.2(Max) |
| Package Length | 6.6(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this STD15N60M2-EP power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh m2 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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