STMicroelectronicsSTB8NM60DMOSFETs
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 8 | |
| 1000@10V | |
| 15@10V | |
| 15 | |
| 380@25V | |
| 100000 | |
| 8 | |
| 10 | |
| 26 | |
| 13 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) mm |
| Package Width | 9.35(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This STB8NM60D power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 100000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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