| Compliant | |
| EAR99 | |
| Obsolete | |
| EA | |
| Automotive | No |
| PPAP | No |
| Dual Common Source | |
| Enhancement | |
| N | |
| 2 | |
| 200 | |
| ±20 | |
| 4 | |
| 250 | |
| 1000 | |
| 570@100V | |
| 8@100V | |
| 134@100V | |
| 6 | |
| 1200(Typ) | |
| 26 | |
| 250 | |
| 60 | |
| -65 | |
| 200 | |
| Loose | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 4.32(Max) mm |
| Package Width | 9.91(Max) mm |
| Package Length | 20.7(Max) mm |
| PCB changed | 5 |
| Supplier Package | STAC780F |
| 5 | |
| Lead Shape | Flat |
By using a combination of metal-oxide-semiconductor technology, this STAC4932F RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |
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