| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.5 | |
| 12 | |
| 100 | |
| 1 | |
| 20@10V | |
| 23.1@4.5V|48@10V | |
| 48 | |
| 2140@15V | |
| 3500 | |
| 8 | |
| 28 | |
| 44 | |
| 26 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 2.05 mm |
| Package Length | 2.05 mm |
| PCB changed | 6 |
| Supplier Package | PowerPAK SC-70 |
| 6 | |
| Lead Shape | No Lead |
Create an effective common drain amplifier using this SIA449DJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3500 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.