VishaySI9910DY-T1-E3Gate and Power Drivers
Driver 1A 1-OUT High Side Half Brdg Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| High Side | |
| Non-Inverting | |
| Half Bridge | |
| 1 | |
| MOSFET | |
| 1 | |
| 50(Typ) | |
| 35(Typ) | |
| 135(Typ) | |
| CMOS | |
| 10.8 | |
| 16.5 | |
| 0.5 | |
| 6 | |
| 7.4 | |
| 1 | |
| 700 | |
| -40 | |
| 85 | |
| Industrial | |
| Short Circuit Protected | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Sleep easy by implementing this SI9910DY-T1-E3 power driver by Vishay. This device has a maximum propagation delay time of 135(typ) ns and a maximum power dissipation of 700 mW. Its maximum power dissipation is 700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device has a minimum operating supply voltage of 10.8 V and a maximum of 16.5 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 85 °C.
| EDA / CAD Models |
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