| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 2(Min) | |
| -55 to 150 | |
| 7.6 | |
| 100 | |
| 1 | |
| 16.5@10V | |
| 34@10V | |
| 34 | |
| 11 | |
| 7.5 | |
| 2 | |
| 230 | |
| 5200 | |
| 31 | |
| 11 | |
| 40 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 13.5@10V|17.5@6V | |
| 5.2 | |
| 50 | |
| 65 | |
| 0.75 | |
| 4.5 | |
| 45 | |
| 1.1 | |
| 0.1 | |
| 1 | |
| 20 | |
| 12.5 | |
| Mounting | Surface Mount |
| Package Height | 1.02 mm |
| Package Width | 5.89 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The SI7852DP-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.