| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 21 | |
| 100 | |
| 1 | |
| 33@10V | |
| 12.8@10V|9.7@7.5V|6.1@4.5V | |
| 12.8 | |
| 2.9 | |
| 1.8 | |
| 28 | |
| 550@50V | |
| 26@50V | |
| 1.5 | |
| 217 | |
| 4100 | |
| 9 | |
| 13 | |
| 16 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 36@4.5V|29@7.5V|27@10V | |
| 4.1 | |
| 40 | |
| 70 | |
| 0.8 | |
| 3.5 | |
| 30 | |
| 1.2 | |
| 0.2 | |
| 2 | |
| 20 | |
| 7.9 | |
| Mounting | Surface Mount |
| Package Height | 1.02 mm |
| Package Width | 5.89 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI7454DDP-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 4100 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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