| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 40 | |
| 5.5@10V | |
| 49.5@4.5V|97@10V | |
| 97 | |
| 4230@15V | |
| 5000 | |
| 12|24 | |
| 12|58 | |
| 56|47 | |
| 17|70 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Increase the current or voltage in your circuit with this SI7139DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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