| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 3.6 | |
| 60@4.5V | |
| 6@4.5V | |
| 1100 | |
| 25 | |
| 35 | |
| 45 | |
| 22 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this SI3443BDV-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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