| 유럽 연합 RoHS 명령어 | Compliant |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | SiC |
| Configuration | Single Hex Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 21 |
| Operating Junction Temperature (°C) | 175 |
| Maximum Continuous Drain Current (A) | 75 |
| Maximum Drain-Source Resistance (mOhm) | 23.4@18V |
| Typical Gate Charge @ Vgs (nC) | 170@18V |
| Typical Input Capacitance @ Vds (pF) | 4532@800V |
| Maximum Power Dissipation (mW) | 267000 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 21 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 13 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
