| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | EA |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| 제품 카테고리 | Power MOSFET |
| Material | SiC |
| Configuration | Single Hex Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 22 |
| Maximum Gate Threshold Voltage (V) | 4.2 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 28@18V |
| Typical Gate Charge @ Vgs (nC) | 121@18V |
| Typical Gate to Drain Charge (nC) | 40 |
| Typical Gate to Source Charge (nC) | 36 |
| Typical Reverse Recovery Charge (nC) | 206 |
| Typical Input Capacitance @ Vds (pF) | 3465@800V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 13.5@800V |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Output Capacitance (pF) | 140 |
| Maximum Power Dissipation (mW) | 555000 |
| Typical Fall Time (ns) | 34 |
| Typical Rise Time (ns) | 57 |
| Typical Turn-Off Delay Time (ns) | 101 |
| Typical Turn-On Delay Time (ns) | 54 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 19@15V|18.5@18V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 281 |
| Typical Diode Forward Voltage (V) | 3 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Reverse Recovery Time (ns) | 22.6 |
| Typical Gate Threshold Voltage (V) | 3 |
| Maximum Positive Gate-Source Voltage (V) | 22 |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 11.8 |
| Package Length | 14 |
| PCB changed | 7 |
| Tab | Tab |
| Supplier Package | HU3PAK |
| Pin Count | 8 |
