onsemiSBC817-16LT3GGP BJT

Implement this NPN SBC817-16LT3G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.