| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 6.3 | |
| 30@10V | |
| 14.6@10V | |
| 14.6 | |
| 560@20V | |
| 2000 | |
| 11 | |
| 6 | |
| 21 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.45(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SO |
| 8 |
This PHN203,518 power MOSFET from NXP Semiconductors can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.