NXP SemiconductorsPBSS4032PT,215GP BJT

Trans GP BJT PNP 30V 2.4A 1100mW 3-Pin SOT-23 T/R Automotive AEC-Q101

This specially engineered PNP PBSS4032PT,215 GP BJT from NXP Semiconductors comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.

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