onsemiNVJS4151PT1GMOSFETs
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| 3.2 | |
| 10000000 | |
| 1 | |
| 67@4.5V | |
| 10@4.5V | |
| 850@10V | |
| 1200 | |
| 4200 | |
| 1700 | |
| 2700 | |
| 850 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
This NVJS4151PT1G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 1200 mW. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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