onsemiNVB60N06T4GMOSFETs
Trans MOSFET N-CH 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 60 | |
| 100 | |
| 1 | |
| 14@10V | |
| 62@10V | |
| 62 | |
| 2300@25V | |
| 150000 | |
| 142.5 | |
| 180.7 | |
| 94.5 | |
| 25.5 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.29(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this NVB60N06T4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 150000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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