| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±6 | |
| 1 | |
| 0.43 | |
| 2000 | |
| 1 | |
| 900@4.5V | |
| 1.7@4.5V | |
| 105@16V | |
| 280 | |
| 19 | |
| 12 | |
| 35 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.55 |
| Package Width | 1.2 |
| Package Length | 1.6 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| 6 |
Use ON Semiconductor's NTZD3152PT1H power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 280000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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