| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ยฑ20 | |
| 14.1 | |
| 4.3@10V | |
| 26.3@4.5V|58.9@10V | |
| 58.9 | |
| 4068@25V | |
| 2120 | |
| 42.2 | |
| 4.7 | |
| 68.6 | |
| 15.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this NTMS4920NR2G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2120 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 ยฐC and a maximum of 150 ยฐC. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.