| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 10.8 | |
| 100 | |
| 1 | |
| 10.6@11.5V | |
| 6@4.5V|13@11.5V | |
| 795@15V | |
| 5430 | |
| 3.8|3 | |
| 15.3|29 | |
| 12.7|17.6 | |
| 10.8|6.65 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 5.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| 5 | |
| Lead Shape | No Lead |
Compared to traditional transistors, NTMFS4823NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5430 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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