| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 13.8 | |
| 6.95@11.5V | |
| 10.7@4.5V | |
| 1400@12V | |
| 5610 | |
| 3.8|3.1 | |
| 38|20 | |
| 16.6|23 | |
| 13.3|8.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 5.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| 5 | |
| Lead Shape | No Lead |
This NTMFS4821NT1G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 38500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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