| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 140 | |
| 60 | |
| 8 | |
| 0.9@10mA@1A | |
| 0.02@0.01A@0.1A|0.075@0.1A@1A|0.14@0.2A@2A | |
| 2 | |
| 100 | |
| 160@10mA@2V|160@500mA@2V|150@1A@2V|100@2A@2V | |
| 540 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN NSS60201LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 540 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 8 V.
| EDA / CAD Models |
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