onsemiMUN5133T1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 310mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@0.3mA@10mA | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 1.24 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor's PNP MUN5133T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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