onsemiMSD1328-RT1GGP BJT

Trans GP BJT NPN 20V 0.5A 200mW 3-Pin SC-59 T/R

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MSD1328-RT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 12 V.

A datasheet is only available for this product at this time.

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