onsemiMMUN2231LT1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 8@5mA@10V | |
| 2.2 | |
| -55 to 150 | |
| 1 | |
| 0.25@5mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| <30 | |
| Mounting | Surface Mount |
| Package Height | 0.94 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
If you are building a digital signal processing device, make sure to use ON Semiconductor's NPN MMUN2231LT1G digital transistor's within your circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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