| Not Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| 0.95@15mA@150mA|1.2@50mA@500mA | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V | |
| 350 | |
| -55 | |
| 150 | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.98 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
This NPN MMBT4401 general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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