구매 최고 구매자
onsemiMMBT2907ALT1GGP BJT
Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| MMBT2907ALT1G | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| -55 to 150 | |
| 1.3@15mA@150mA|2.6@50mA@500mA | |
| 0.4@15mA@150mA|1.6@50mA@500mA | |
| 0.6 | |
| 10 | |
| 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | |
| 350 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The three terminals of this PNP MMBT2907ALT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.