onsemiMJD112-1GDarlington BJT
Trans Darlington NPN 100V 2A 1750mW 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 12000@2A@3V | |
| 100 | |
| 100 | |
| 5 | |
| 4@40mA@4A | |
| 2 | |
| 20 | |
| 0.05 | |
| -65 to 150 | |
| 25(Min) | |
| 3@40mA@4A|2@8mA@2A | |
| 200@4A@3V|1000@2A@3V|500@0.5A@3V | |
| 1750 | |
| -65 | |
| 150 | |
| Tube | |
| 500 to 3600|<500 | |
| Mounting | Through Hole |
| Package Height | 6.35(Max) mm |
| Package Width | 2.38(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | IPAK |
| 3 | |
| Lead Shape | Through Hole |
Amplify your current with the NPN MJD112-1G Darlington transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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