MagnaChip SemiconductorMDF9N60BTHMOSFETs
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220F Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 9 | |
| 100 | |
| 1 | |
| 800@10V | |
| 23.9@10V | |
| 23.9 | |
| 1226@25V | |
| 48000 | |
| 41.6 | |
| 33.4 | |
| 100.3 | |
| 21.5 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 16.13(Max) |
| Package Width | 4.93(Max) |
| Package Length | 10.71(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220F |
| 3 | |
| Lead Shape | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The MDF9N60BTH power MOSFET from MagnaChip Semiconductor provides the solution. Its maximum power dissipation is 48000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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