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Semicoa SemiconductorsJAN2N3501GP BJT
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 150 | |
| 6 | |
| -65 to 200 | |
| 0.8@1mA@10mA|1.2@15mA@150mA | |
| 0.2@1mA@10mA|0.4@15mA@150mA | |
| 0.3 | |
| 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | |
| 1000 | |
| -65 | |
| 200 | |
| Military | |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 | |
| Lead Shape | Through Hole |
Thanks to Semicoa Semiconductors, your circuit can handle high levels of voltage using the NPN JAN2N3501 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |
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