Reduced Price
IXYSIXTY1R4N60PMOSFETs
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) TO-252AA
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 1.4 | |
| 9000@10V | |
| 5.2@10V | |
| 5.2 | |
| 140@25V | |
| 50000 | |
| 16 | |
| 16 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-252AA |
| 3 |
Compared to traditional transistors, IXTY1R4N60P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 50000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.