| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 150 |
| Maximum Gate-Source Voltage (V) | ±15 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 15 |
| Maximum Gate-Source Leakage Current (nA) | 50 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 240@10V |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate to Drain Charge (nC) | 12 |
| Typical Gate to Source Charge (nC) | 17 |
| Typical Reverse Recovery Charge (nC) | 638 |
| Typical Input Capacitance @ Vds (pF) | 3650@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 55@25V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 210 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Turn-On Delay Time (ns) | 21 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 45 |
| Typical Gate Plateau Voltage (V) | 5.3 |
| Typical Reverse Recovery Time (ns) | 116 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Mounting | Surface Mount |
| Package Height | 4.7(Max) |
| Package Width | 9.4(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-263 |
| Pin Count | 3 |
