IXYSIXLF19N250AIGBT Chip

Trans IGBT Chip N-CH 2500V 32A 250W 3-Pin ISOPLUS I4-PAC

The IXLF19N250A IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 2500 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.

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