| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ยฑ20 | |
| 150 | |
| 11@10V | |
| 240@10V | |
| 240 | |
| 7000@25V | |
| 680000 | |
| 36 | |
| 32 | |
| 150 | |
| 30 | |
| -55 | |
| 175 | |
| Mounting | Screw |
| Package Height | 9.6(Max) |
| Package Width | 25.42(Max) |
| Package Length | 38.23(Max) |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 | |
| Lead Shape | Screw |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFN180N15P power MOSFET. Its maximum power dissipation is 680000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 ยฐC to 175 ยฐC. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
AI ๊ธฐ๋ฐ ์๋ฃ๊ธฐ๊ธฐ ์ค๊ณ
Arrow์ ์ต์ ๋ฐฑ์์์ ์ง๋จ ๋ฐ ์น๋ฃ ์๋ฃจ์ ์ ๋ ๋น ๋ฅด๊ณ ์์ ํ๊ฒ ๊ฐ๋ฐํ ์ ์๋ ์์คํ ์ค๊ณ ํ, ๋ถํ ์ถ์ฒ ๋ฐ AI ์ธ์ฌ์ดํธ๋ฅผ ํ์ธํ์ธ์.