| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 30 | |
| 200@10V | |
| 70@10V | |
| 70 | |
| 4150@25V | |
| 460000 | |
| 24 | |
| 24 | |
| 82 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
Create an effective common drain amplifier using this IXFH30N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 460000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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