| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 10 | |
| 1100@10V | |
| 40@10V | |
| 40 | |
| 2050@25V | |
| 300000 | |
| 22 | |
| 22 | |
| 62 | |
| 21 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.4(Max) mm |
| Package Length | 10.41(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This IXFA10N80P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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