| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 0.35 | |
| 3600@10V | |
| 17(Max)@10V | |
| 17(Max) | |
| 170@25V | |
| 1000 | |
| 11 | |
| 9.9 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 3.37(Max) |
| Package Width | 6.29(Max) |
| Package Length | 5(Max) |
| PCB changed | 4 |
| Standard Package Name | DIP |
| Supplier Package | HVMDIP |
| 4 | |
| Lead Shape | Through Hole |
As an alternative to traditional transistors, the IRFD310PBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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