| 유럽 연합 RoHS 명령어 | Compliant |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Obsolete |
| 미국 세관 상품 코드 | COMPONENTS |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 11 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 15 |
| Maximum Drain-Source Resistance (mOhm) | 13.5@10V |
| Typical Gate Charge @ Vgs (nC) | 75@10V |
| Typical Gate Charge @ 10V (nC) | 75 |
| Typical Gate to Drain Charge (nC) | 12 |
| Typical Gate to Source Charge (nC) | 14 |
| Typical Reverse Recovery Charge (nC) | 47 |
| Typical Input Capacitance @ Vds (pF) | 4030@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 410@25V |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 580 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 76 |
| Typical Rise Time (ns) | 23 |
| Typical Turn-Off Delay Time (ns) | 150 |
| Typical Turn-On Delay Time (ns) | 15 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 22.4@4V|16.3@6V|14@8V|12.51@10V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Typical Gate Plateau Voltage (V) | 3.5 |
| Typical Reverse Recovery Time (ns) | 40 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 1.38 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
